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Recently we developed a model for symmetric double‐gate MOSFETs (SDDGM) that, for the first time, considers the doping concentration in the Si film in the complete range from 1×1014 to 3×1018 cm−3. The model covers a wide range of technological parameters and includes short channel effects. It was validated for different devices using data from simulations, as well as measured in real devices. In...
This paper focuses on the implementation of table‐based models of high‐frequency transistors for time‐domain simulators at microwave and mm‐wave frequencies. In this frequency range, the channel is not capable of responding to the excitation instantaneously therefore, a delay‐time exists between the channel response and the channel excitation. This delay is represented by a complex trans‐conductance...
This paper concerns the problem of modelling of power MOS transistors in SPICE. In the paper the new form of the electrothermal d.c. model (ETM) of the considered class of power devices is proposed. The ETM is based on the modified Shichman–Hodges model, in which the generation current, the breakdown voltage, the sub‐threshold region, the thermally dependent series resistances and self‐heating are...
In this paper three models of CoolMOSC3 transistors worked out by Infineon Technologies, dedicated for SPICE, are presented and investigated. These models are verified experimentally both for dc and ac device operating conditions. The advantages and drawbacks of the investigated models are shown and discussed. The device operating conditions, at which the models are of acceptable accuracy, are identified...
This paper presents the design of a power system stabilizer using decentralized adaptive model following tracking control (DAMFTC) approach to damp oscillations of generators in transient response subjected to uncertainties and generating fault actuators. The power system is represented as a collection of interconnected dynamical subsystems each described by a set of differential/algebraic equations...
The modeling of MOS transistors used for RF applications needs the definition of a lumped equivalent circuit where the intrinsic device and series extrinsic resistances are properly evaluated. The model accuracy depends on the extraction precision of each intrinsic lumped element. In order to determine the intrinsic device behavior, it is necessary to first remove the series extrinsic resistances...
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